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february 2007 rev 1 1/15 15 std100n3lf3 STU100N3LF3 n-channel 30v - 0.0045 ? - 80a - dpak - ipak planar stripfet? ii power mosfet general features 100% avalanche tested logic level threshold description this power mosfet is the latest refinement of stmicroelectronics unique ?single feature size?? strip-based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical alignment steps therefore a remarkable manufacturing reproducibility. this new improved device has been specifically designed for automotive application and dc-dc converters. applications switching application internal schematic diagram type v dsss r ds(on) i d pw std100n3lf3 30 v <0.0055 ? 80 a (1) 1. current limited by package 110 w STU100N3LF3 30 v <0.0055 ? 80 a (1) 110 w 1 3 dpak 3 2 1 ipak www.st.com order codes part number marking package packaging std100n3lf3 100n3lf3 dpak tape & reel STU100N3LF3 100n3lf3 ipak tube
contents std100n3lf3 - STU100N3LF3 2/15 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
std100n3lf3 - STU100N3LF3 electrical ratings 3/15 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v i d (1) 1. current limited by package. drain current (continuous) at t c = 25c 80 a i d drain current (continuous) at t c =100c 70 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 320 a p tot total dissipation at t c = 25c 110 w derating factor 0.73 w/c dv/dt (3) 3. i sd 80a, di/dt 360 a/s, v ds v (br)dss , t j t jmax peak diode recovery voltage slope 3.9 v/ns t stg storage temperature -55 to 175 c t j max. operating junction temperature table 2. thermal data symbol parameter value unit r thjc thermal resistance junction-case max 1.36 c/w r thja thermal resistance junction-ambient max 100 c/w t l maximum lead temperature for soldering purpose 275 c table 3. avalanche characteristics symbol parameter value unit i ar not-repetitive avalanche current (pulse width limited by t j max) 40 a e as single pulsed avalanche energy (starting t j = 25c, i d = i av, v dd = 24v 500 mj
electrical characteristics std100n3lf3 - STU100N3LF3 4/15 2 electrical characteristics (t case =25c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20v 200 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 1v r ds(on) static drain-source on resistance v gs = 10v, i d = 40a v gs = 5v, i d = 20a 0.0045 0.008 0.0055 0.01 ? ? v gs = 10 v, i d = 40 a @125c v gs = 5 v, i d = 20 a @125c 0.0068 0.0146 ? ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds = 10 v , i d = 15a 31 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 2060 728 67 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 24v, i d = 80a v gs = 5v figure 15 on page 9 20 7 7.5 27 nc nc nc r g gate input resistance f = 1mhz gate dc bias = 0 test signal level = 20mv open drain 1.9 ?
std100n3lf3 - STU100N3LF3 electrical characteristics 5/15 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 15v, i d = 40a, r g =4.7 ?, v gs =10v figure 14 on page 9 9 205 31 35 ns ns ns ns table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current 80 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) 320 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 40a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80a, di/dt = 100a/s, v dd = 25v, t j = 150c figure 16 on page 9 40 40 2 ns c a
electrical characteristics std100n3lf3 - STU100N3LF3 6/15 2.1 electrical characteri stics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characteristics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance
std100n3lf3 - STU100N3LF3 electrical characteristics 7/15 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized bvdss vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics
electrical characteristics std100n3lf3 - STU100N3LF3 8/15 the previous curve gives the single pulse safe operating area for unclamped inductive loads, under the following conditions: p d(ave) = 0.5 * (1.3 * bv dss *i av ) e as(ar) = p d(ave) * t av where: i av is the allowable current in avalanche p d(ave) is the average power dissipation in avalanche (single pulse) t av is the time in avalanche figure 13. allowable iav vs time in avalanche
std100n3lf3 - STU100N3LF3 test circuit 9/15 3 test circuit figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times
package mechanical data std100n3lf3 - STU100N3LF3 10/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
std100n3lf3 - STU100N3LF3 package mechanical data 11/15 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e
package mechanical data std100n3lf3 - STU100N3LF3 12/15 dim. mm. inch min. typ max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b4 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 d1 5.1 0.200 e 6.4 6.6 0.252 0.260 e1 4.7 0.185 e 2.28 0.090 e1 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l 1 0.039 (l1) 2.8 0.110 l2 0.8 0.031 l4 0.6 1 0.023 0.039 r 0.2 0.008 v2 0 8 0 8 dpak mechanical data 0068772-f
std100n3lf3 - STU100N3LF3 packaging mechanical data 13/15 5 packaging mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
revision history std100n3lf3 - STU100N3LF3 14/15 6 revision history table 8. revision history date revision changes 07-feb-2006 1 initial release.
std100n3lf3 - STU100N3LF3 15/15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2007 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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